Fast Strong Distributed Gate Thyristors

Fast Strong Distributed Gate Thyristors (high-speed pulse thyristors) are designed for performance upon high frequency up to 20 kHz. Strong distributed amplified gate along with turn-off time less than 10 MicroSec designates high current drive capability upon high frequency.

Type

PARAMETERS

UDRM, URRM

ITAV (Tc)

(di/dt)c

(du/dt)c

tq

 

V

A (ºC)

A/µs

V/µs

µs

мм

TFI133S-400

600 ÷ 1200

400 (81)

1600

1000

5 ÷ 6,3

Ø47 х 14

Ø60 х 26

TFI143S-400

800 ÷ 1200

400 (92)

2000

1000

6,3 ÷ 8,0

Ø47 х 14

Ø60 х 26

TFI143S-500

800 ÷ 1200

500 (87)

2000

1000

6,3 ÷ 8,0

Ø60 х 14

Ø60 х 26

TFI153S-800

800 ÷ 1300

800 (85)

1600

1000

6,3 ÷ 10

Ø75 х 26

TFI153S-1000

800 ÷ 1300

1000 (78)

1600

1000

8,0 ÷ 12,5

Ø75 х 26